Renesas Electronics America RJH60D6DPK-00#T0
Product Information
Gate Charge:
104nC
Base Part Number:
RJH60D
Detailed Description:
IGBT Trench 600V 80A 260W Through Hole TO-3P
Reverse Recovery Time (trr):
100ns
Mounting Type:
Through Hole
Current - Collector (Ic) (Max):
80A
Vce(on) (Max) @ Vge, Ic:
2.2V @ 15V, 40A
Operating Temperature:
150°C (TJ)
Supplier Device Package:
TO-3P
Packaging:
Tube
Switching Energy:
850µJ (on), 600µJ (off)
Td (on/off) @ 25°C:
50ns/160ns
Power - Max:
260W
Input Type:
Standard
Package / Case:
TO-3P-3, SC-65-3
Voltage - Collector Emitter Breakdown (Max):
600V
IGBT Type:
Trench
Test Condition:
300V, 40A, 5Ohm, 15V
Manufacturer:
Renesas Electronics America
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Yes. Our products in Transistors - IGBTs - Single category are shipped in lowest possible time.
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This is manufactured by Renesas Electronics America. The manufacturer part number is RJH60D6DPK-00#T0. Features 104nc gate charge. Base Part Number: rjh60d. It features igbt trench 600v 80a 260w through hole to-3p. It has a trr (reverse recovery time) of 100ns. The product is available in through hole configuration. The maximum collector current includes 80a. Features 2.2v @ 15v, 40a. The product has 150°c (tj) operating temperature range. to-3p is the supplier device package value. In addition, tube is the available packaging type of the product. Provide switching energy up to 850µj (on), 600µj (off). Td (on/off) value of 50ns/160ns. The maximum power of the product is 260w. It carries standard input type. Moreover, the product comes in to-3p-3, sc-65-3. The maximum collector emitter breakdown voltage of the product is 600v. Features an IGBT trench type. Test condition included 300v, 40a, 5ohm, 15v. The renesas electronics america's product offers user-desired applications.
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