Renesas Electronics America RJH1CV7DPQ-E0#T2

RJH1CV7DPQ-E0-T2 Renesas Electronics America RJH1CV7DPQ-E0#T2
Renesas Electronics America

Product Information

Gate Charge:
166nC
Td (on/off) @ 25°C:
53ns/185ns
Detailed Description:
IGBT Trench 1200V 70A 320W Through Hole TO-247
Reverse Recovery Time (trr):
200ns
Mounting Type:
Through Hole
Current - Collector (Ic) (Max):
70A
Vce(on) (Max) @ Vge, Ic:
2.3V @ 15V, 35A
Supplier Device Package:
TO-247
Voltage - Collector Emitter Breakdown (Max):
1200V
Packaging:
Tube
Switching Energy:
3.2mJ (on), 2.5mJ (off)
Operating Temperature:
150°C (TJ)
Power - Max:
320W
Customer Reference:
Input Type:
Standard
Package / Case:
TO-247-3
IGBT Type:
Trench
Test Condition:
600V, 35A, 5Ohm, 15V
Manufacturer:
Renesas Electronics America
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This is manufactured by Renesas Electronics America. The manufacturer part number is RJH1CV7DPQ-E0#T2. Features 166nc gate charge. Td (on/off) value of 53ns/185ns. It features igbt trench 1200v 70a 320w through hole to-247. It has a trr (reverse recovery time) of 200ns. The product is available in through hole configuration. The maximum collector current includes 70a. Features 2.3v @ 15v, 35a. to-247 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 1200v. In addition, tube is the available packaging type of the product. Provide switching energy up to 3.2mj (on), 2.5mj (off). The product has 150°c (tj) operating temperature range. The maximum power of the product is 320w. It carries standard input type. Moreover, the product comes in to-247-3. Features an IGBT trench type. Test condition included 600v, 35a, 5ohm, 15v. The renesas electronics america's product offers user-desired applications.

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Mult Dev EOL 15/Dec/2018(PCN Obsolescence/ EOL)
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RJH1CV7DPQ-E0#T2(Datasheets)

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