ON Semiconductor NGTG40N120FL2WG

NGTG40N120FL2WG ON Semiconductor
ON Semiconductor

Product Information

Gate Charge:
313nC
Base Part Number:
NGTG40
Detailed Description:
IGBT Trench Field Stop 1200V 80A 535W Through Hole TO-247
Mounting Type:
Through Hole
Current - Collector (Ic) (Max):
80A
Vce(on) (Max) @ Vge, Ic:
2.4V @ 15V, 40A
Operating Temperature:
-55°C ~ 175°C (TJ)
Supplier Device Package:
TO-247
Packaging:
Tube
Switching Energy:
3.4mJ (on), 1.1mJ (off)
Td (on/off) @ 25°C:
116ns/286ns
Power - Max:
535W
Customer Reference:
Input Type:
Standard
Package / Case:
TO-247-3
Voltage - Collector Emitter Breakdown (Max):
1200V
IGBT Type:
Trench Field Stop
Test Condition:
600V, 40A, 10Ohm, 15V
Current - Collector Pulsed (Icm):
200A
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is NGTG40N120FL2WG. Features 313nc gate charge. Base Part Number: ngtg40. It features igbt trench field stop 1200v 80a 535w through hole to-247. The product is available in through hole configuration. The maximum collector current includes 80a. Features 2.4v @ 15v, 40a. The product has -55°c ~ 175°c (tj) operating temperature range. to-247 is the supplier device package value. In addition, tube is the available packaging type of the product. Provide switching energy up to 3.4mj (on), 1.1mj (off). Td (on/off) value of 116ns/286ns. The maximum power of the product is 535w. It carries standard input type. Moreover, the product comes in to-247-3. The maximum collector emitter breakdown voltage of the product is 1200v. Features an IGBT trench field stop type. Test condition included 600v, 40a, 10ohm, 15v. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The on semiconductor's product offers user-desired applications.

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Contact mask change 11/Jun/2021(PCN Assembly/Origin)
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Mult Dev EOL 7/Apr/2021(PCN Obsolescence/ EOL)
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NGTG40N120FL2WG(Datasheets)

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