ON Semiconductor NGTG12N60TF1G

NGTG12N60TF1G ON Semiconductor
NGTG12N60TF1G
ON Semiconductor

Product Information

Dimensions:
15.5 x 5.5 x 26.5mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
54 W
Maximum Continuous Collector Current:
88 (Pulse) A
Maximum Collector Emitter Voltage:
600 V
Height:
26.5mm
Width:
5.5mm
Length:
15.5mm
Maximum Gate Emitter Voltage:
±20V
Package Type:
TO-3PF
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Base Part Number:
NGTG12
Detailed Description:
IGBT
Series:
*
Packaging:
Tube
Customer Reference:
Manufacturer:
ON Semiconductor
RoHs Compliant
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This is manufactured by ON Semiconductor. The manufacturer part number is NGTG12N60TF1G. The given dimensions of the product include 15.5 x 5.5 x 26.5mm. The product is available in through hole configuration. Provides up to 54 w maximum power dissipation. The product has a maximum 88 (pulse) a continuous collector current . Whereas features a 600 v of collector emitter voltage (max). In addition, the height is 26.5mm. Furthermore, the product is 5.5mm wide. Its accurate length is 15.5mm. It offers a maximum ±20v gate emitter voltage . The package is a sort of to-3pf. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. Base Part Number: ngtg12. It features igbt. In addition, tube is the available packaging type of the product. The on semiconductor's product offers user-desired applications.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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Mult Dev Mold Chg 25/Mar/2020(PCN Assembly/Origin)
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NGTG12N60TF1G(Datasheets)

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