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ON Semiconductor NGTB75N60SWG

NGTB75N60SWG ON Semiconductor
ON Semiconductor

Product Information

Gate Charge:
310nC
Base Part Number:
NGTB75
Detailed Description:
IGBT 600V 100A 595W Through Hole TO-247-3
Reverse Recovery Time (trr):
80ns
Mounting Type:
Through Hole
Current - Collector (Ic) (Max):
100A
Vce(on) (Max) @ Vge, Ic:
2V @ 15V, 75A
Operating Temperature:
-55°C ~ 175°C (TJ)
Supplier Device Package:
TO-247-3
Packaging:
Tube
Switching Energy:
1.5mJ (on), 1mJ (off)
Td (on/off) @ 25°C:
110ns/270ns
Power - Max:
595W
Customer Reference:
Input Type:
Standard
Package / Case:
TO-247-3
Voltage - Collector Emitter Breakdown (Max):
600V
Test Condition:
400V, 75A, 10Ohm, 15V
Current - Collector Pulsed (Icm):
200A
Manufacturer:
ON Semiconductor
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is NGTB75N60SWG. Features 310nc gate charge. Base Part Number: ngtb75. It features igbt 600v 100a 595w through hole to-247-3. It has a trr (reverse recovery time) of 80ns. The product is available in through hole configuration. The maximum collector current includes 100a. Features 2v @ 15v, 75a. The product has -55°c ~ 175°c (tj) operating temperature range. to-247-3 is the supplier device package value. In addition, tube is the available packaging type of the product. Provide switching energy up to 1.5mj (on), 1mj (off). Td (on/off) value of 110ns/270ns. The maximum power of the product is 595w. It carries standard input type. Moreover, the product comes in to-247-3. The maximum collector emitter breakdown voltage of the product is 600v. Test condition included 400v, 75a, 10ohm, 15v. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The on semiconductor's product offers user-desired applications.

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Mult Devices 31/Jan/2019(PCN Obsolescence/ EOL)
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NGTBYYY 28/Aug/2017(PCN Assembly/Origin)
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NGTB75N60SWG(Datasheets)
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FPCN20461X 27/nov/2015(PCN Design/Specification)

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