ON Semiconductor NGTB60N60SWG

NGTB60N60SWG ON Semiconductor
ON Semiconductor

Product Information

Current - Collector (Ic) (Max):
120A
Detailed Description:
IGBT Trench Field Stop 600V 120A 298W Through Hole TO-247
Vce(on) (Max) @ Vge, Ic:
2.5V @ 15V, 60A
Td (on/off) @ 25°C:
87ns/180ns
Operating Temperature:
-55°C ~ 150°C (TJ)
Input Type:
Standard
Package / Case:
TO-247-3
Gate Charge:
173nC
Base Part Number:
NGTB60
Voltage - Collector Emitter Breakdown (Max):
600V
Reverse Recovery Time (trr):
76ns
Switching Energy:
1.41mJ (on), 600µJ (off)
Test Condition:
400V, 60A, 10Ohm, 15V
Manufacturer:
ON Semiconductor
IGBT Type:
Trench Field Stop
Current - Collector Pulsed (Icm):
240A
Mounting Type:
Through Hole
Supplier Device Package:
TO-247
Packaging:
Tube
Power - Max:
298W
Customer Reference:
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is NGTB60N60SWG. The maximum collector current includes 120a. It features igbt trench field stop 600v 120a 298w through hole to-247. Features 2.5v @ 15v, 60a. Td (on/off) value of 87ns/180ns. The product has -55°c ~ 150°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-247-3. Features 173nc gate charge. Base Part Number: ngtb60. The maximum collector emitter breakdown voltage of the product is 600v. It has a trr (reverse recovery time) of 76ns. Provide switching energy up to 1.41mj (on), 600µj (off). Test condition included 400v, 60a, 10ohm, 15v. The on semiconductor's product offers user-desired applications. Features an IGBT trench field stop type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The product is available in through hole configuration. to-247 is the supplier device package value. In addition, tube is the available packaging type of the product. The maximum power of the product is 298w.

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Mult Dev EOL 18/Oct/2018(PCN Obsolescence/ EOL)
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NGTB60N60SWG(Datasheets)

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