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This is manufactured by ON Semiconductor. The manufacturer part number is NGTB50N65FL2WG. It has typical 50 weeks of manufacturer standard lead time. The maximum collector current includes 100a. It features igbt trench field stop 650v 100a 417w through hole to-247. Features 2v @ 15v, 50a. Td (on/off) value of 100ns/237ns. The product has -55°c ~ 175°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-247-3. Features 220nc gate charge. Base Part Number: ngtb50. The maximum collector emitter breakdown voltage of the product is 650v. It has a trr (reverse recovery time) of 94ns. Provide switching energy up to 1.5mj (on), 460µj (off). Test condition included 400v, 50a, 10ohm, 15v. The on semiconductor's product offers user-desired applications. Features an IGBT trench field stop type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The product is available in through hole configuration. to-247 is the supplier device package value. In addition, tube is the available packaging type of the product. The maximum power of the product is 417w.
For more information please check the datasheets.
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