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ON Semiconductor NGTB50N60SWG

NGTB50N60SWG ON Semiconductor
ON Semiconductor

Product Information

Gate Charge:
135nC
Base Part Number:
NGTB50
Detailed Description:
IGBT Trench Field Stop 600V 100A Through Hole TO-247-3
Reverse Recovery Time (trr):
376ns
Mounting Type:
Through Hole
Current - Collector (Ic) (Max):
100A
Vce(on) (Max) @ Vge, Ic:
2.6V @ 15V, 50A
Operating Temperature:
-55°C ~ 150°C (TJ)
Supplier Device Package:
TO-247-3
Packaging:
Tube
Switching Energy:
600µJ (off)
Td (on/off) @ 25°C:
70ns/144ns
Customer Reference:
Input Type:
Standard
Package / Case:
TO-247-3
Voltage - Collector Emitter Breakdown (Max):
600V
IGBT Type:
Trench Field Stop
Test Condition:
400V, 50A, 10Ohm, 15V
Current - Collector Pulsed (Icm):
200A
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is NGTB50N60SWG. Features 135nc gate charge. Base Part Number: ngtb50. It features igbt trench field stop 600v 100a through hole to-247-3. It has a trr (reverse recovery time) of 376ns. The product is available in through hole configuration. The maximum collector current includes 100a. Features 2.6v @ 15v, 50a. The product has -55°c ~ 150°c (tj) operating temperature range. to-247-3 is the supplier device package value. In addition, tube is the available packaging type of the product. Provide switching energy up to 600µj (off). Td (on/off) value of 70ns/144ns. It carries standard input type. Moreover, the product comes in to-247-3. The maximum collector emitter breakdown voltage of the product is 600v. Features an IGBT trench field stop type. Test condition included 400v, 50a, 10ohm, 15v. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The on semiconductor's product offers user-desired applications.

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Assembly Change 29/Mar/2021(PCN Assembly/Origin)
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FPCN20461X 27/nov/2015(PCN Design/Specification)
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Mult Dev EOL 29/Jan/2021(PCN Obsolescence/ EOL)
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NGTB50N60SWG(Datasheets)

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