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This is manufactured by ON Semiconductor. The manufacturer part number is NGTB50N60S1WG. The product has a maximum 100 a continuous collector current . The given dimensions of the product include 16.25 x 5.3 x 21.4mm. The product is available in through hole configuration. Provides up to 208 w maximum power dissipation. It has a maximum operating temperature of +175 °c. Whereas features a 600 v of collector emitter voltage (max). In addition, the height is 21.4mm. Furthermore, the product is 5.3mm wide. Its accurate length is 16.25mm. It offers a maximum ±20v gate emitter voltage . The package is a sort of to-247. Whereas, the minimum operating temperature of the product is -55 °c. It has about 1mhz switching speed . The product is available in [Cannel Type] channel. It has approximately 5328pf gate capacitance . It contains 3 pins. The product offers single transistor configuration. The maximum collector current includes 100a. It features igbt trench 600v 100a 417w through hole to-247-3. Features 2v @ 15v, 50a. Td (on/off) value of 100ns/237ns. The product has -55°c ~ 175°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-247-3. Features 220nc gate charge. Base Part Number: ngtb50. The maximum collector emitter breakdown voltage of the product is 600v. It has a trr (reverse recovery time) of 94ns. Provide switching energy up to 1.5mj (on), 460µj (off). Test condition included 400v, 50a, 10ohm, 15v. The on semiconductor's product offers user-desired applications. Features an IGBT trench type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . to-247-3 is the supplier device package value. In addition, tube is the available packaging type of the product. The maximum power of the product is 417w.
For more information please check the datasheets.
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