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This is manufactured by ON Semiconductor. The manufacturer part number is NGTB50N60FL2WG. The maximum collector current includes 100a. It features igbt trench field stop 600v 100a 417w through hole to-247-3. Features 2v @ 15v, 50a. Td (on/off) value of 100ns/237ns. The product has -55°c ~ 175°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-247-3. Features 220nc gate charge. Base Part Number: ngtb50. The maximum collector emitter breakdown voltage of the product is 600v. It has a trr (reverse recovery time) of 94ns. Provide switching energy up to 1.5mj (on), 460µj (off). Test condition included 400v, 50a, 10ohm, 15v. The on semiconductor's product offers user-desired applications. Features an IGBT trench field stop type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The product is available in through hole configuration. to-247-3 is the supplier device package value. In addition, tube is the available packaging type of the product. The maximum power of the product is 417w.
For more information please check the datasheets.
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