Dimensions:
16.26 x 5.3 x 21.08mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
300 W
Maximum Collector Emitter Voltage:
650 V
Channel Type:
N
Maximum Continuous Collector Current:
70 A
Maximum Gate Emitter Voltage:
±20V
Package Type:
TO-247
Minimum Operating Temperature:
-55 °C
Switching Speed:
1MHz
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
51 Weeks
Current - Collector (Ic) (Max):
70A
Detailed Description:
IGBT Trench Field Stop 650V 70A 300W Through Hole TO-247
Vce(on) (Max) @ Vge, Ic:
2V @ 15V, 35A
Td (on/off) @ 25°C:
72ns/132ns
Operating Temperature:
-55°C ~ 175°C (TJ)
Input Type:
Standard
Package / Case:
TO-247-3
Gate Charge:
125nC
Base Part Number:
NGTB35
Voltage - Collector Emitter Breakdown (Max):
650V
Reverse Recovery Time (trr):
68ns
Switching Energy:
840µJ (on), 280µJ (off)
Test Condition:
400V, 35A, 10Ohm, 15V
Manufacturer:
ON Semiconductor
IGBT Type:
Trench Field Stop
Current - Collector Pulsed (Icm):
120A
Mounting Type:
Through Hole
Supplier Device Package:
TO-247
Packaging:
Tube
Power - Max:
300W
Customer Reference:
