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ON Semiconductor NGTB30N60SWG

NGTB30N60SWG ON Semiconductor
ON Semiconductor

Product Information

Current - Collector (Ic) (Max):
60A
Detailed Description:
IGBT Trench Field Stop 600V 60A 189W Through Hole TO-247
Vce(on) (Max) @ Vge, Ic:
2.2V @ 15V, 30A
Td (on/off) @ 25°C:
57ns/109ns
Operating Temperature:
-55°C ~ 150°C (TJ)
Input Type:
Standard
Package / Case:
TO-247-3
Gate Charge:
90nC
Base Part Number:
NGTB30
Voltage - Collector Emitter Breakdown (Max):
600V
Reverse Recovery Time (trr):
200ns
Switching Energy:
750µJ (on), 540µJ (off)
Test Condition:
400V, 30A, 10Ohm, 15V
Manufacturer:
ON Semiconductor
IGBT Type:
Trench Field Stop
Current - Collector Pulsed (Icm):
120A
Mounting Type:
Through Hole
Supplier Device Package:
TO-247
Packaging:
Tube
Power - Max:
189W
Customer Reference:
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is NGTB30N60SWG. The maximum collector current includes 60a. It features igbt trench field stop 600v 60a 189w through hole to-247. Features 2.2v @ 15v, 30a. Td (on/off) value of 57ns/109ns. The product has -55°c ~ 150°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-247-3. Features 90nc gate charge. Base Part Number: ngtb30. The maximum collector emitter breakdown voltage of the product is 600v. It has a trr (reverse recovery time) of 200ns. Provide switching energy up to 750µj (on), 540µj (off). Test condition included 400v, 30a, 10ohm, 15v. The on semiconductor's product offers user-desired applications. Features an IGBT trench field stop type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The product is available in through hole configuration. to-247 is the supplier device package value. In addition, tube is the available packaging type of the product. The maximum power of the product is 189w.

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EOL 23/Dec/2016(PCN Obsolescence/ EOL)
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NGTB30N60SWG(Datasheets)

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