ON Semiconductor NGTB30N60FWG

NGTB30N60FWG ON Semiconductor
ON Semiconductor

Product Information

Current - Collector (Ic) (Max):
60A
Detailed Description:
IGBT Trench 600V 60A 167W Through Hole TO-247
Vce(on) (Max) @ Vge, Ic:
1.7V @ 15V, 30A
Td (on/off) @ 25°C:
81ns/190ns
Operating Temperature:
-55°C ~ 150°C (TJ)
Input Type:
Standard
Package / Case:
TO-247-3
Gate Charge:
170nC
Base Part Number:
NGTB30
Voltage - Collector Emitter Breakdown (Max):
600V
Reverse Recovery Time (trr):
72ns
Switching Energy:
650µJ (on), 650µJ (off)
Test Condition:
400V, 30A, 10Ohm, 15V
Manufacturer:
ON Semiconductor
IGBT Type:
Trench
Current - Collector Pulsed (Icm):
120A
Mounting Type:
Through Hole
Supplier Device Package:
TO-247
Packaging:
Tube
Power - Max:
167W
Customer Reference:
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is NGTB30N60FWG. The maximum collector current includes 60a. It features igbt trench 600v 60a 167w through hole to-247. Features 1.7v @ 15v, 30a. Td (on/off) value of 81ns/190ns. The product has -55°c ~ 150°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-247-3. Features 170nc gate charge. Base Part Number: ngtb30. The maximum collector emitter breakdown voltage of the product is 600v. It has a trr (reverse recovery time) of 72ns. Provide switching energy up to 650µj (on), 650µj (off). Test condition included 400v, 30a, 10ohm, 15v. The on semiconductor's product offers user-desired applications. Features an IGBT trench type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The product is available in through hole configuration. to-247 is the supplier device package value. In addition, tube is the available packaging type of the product. The maximum power of the product is 167w.

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EOL 23/Dec/2016(PCN Obsolescence/ EOL)
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NGTB30N60FWG(Datasheets)

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