ON Semiconductor NGTB20N120IHSWG

NGTB20N120IHSWG ON Semiconductor
ON Semiconductor

Product Information

Gate Charge:
155nC
Base Part Number:
NGTB20
Detailed Description:
IGBT Trench Field Stop 1200V 40A 156W Through Hole TO-247
Mounting Type:
Through Hole
Current - Collector (Ic) (Max):
40A
Vce(on) (Max) @ Vge, Ic:
2.4V @ 15V, 20A
Operating Temperature:
-55°C ~ 150°C (TJ)
Supplier Device Package:
TO-247
Packaging:
Tube
Switching Energy:
650µJ (off)
Td (on/off) @ 25°C:
-/160ns
Power - Max:
156W
Customer Reference:
Input Type:
Standard
Package / Case:
TO-247-3
Voltage - Collector Emitter Breakdown (Max):
1200V
IGBT Type:
Trench Field Stop
Test Condition:
600V, 20A, 10Ohm, 15V
Current - Collector Pulsed (Icm):
120A
Manufacturer:
ON Semiconductor
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is NGTB20N120IHSWG. Features 155nc gate charge. Base Part Number: ngtb20. It features igbt trench field stop 1200v 40a 156w through hole to-247. The product is available in through hole configuration. The maximum collector current includes 40a. Features 2.4v @ 15v, 20a. The product has -55°c ~ 150°c (tj) operating temperature range. to-247 is the supplier device package value. In addition, tube is the available packaging type of the product. Provide switching energy up to 650µj (off). Td (on/off) value of -/160ns. The maximum power of the product is 156w. It carries standard input type. Moreover, the product comes in to-247-3. The maximum collector emitter breakdown voltage of the product is 1200v. Features an IGBT trench field stop type. Test condition included 600v, 20a, 10ohm, 15v. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The on semiconductor's product offers user-desired applications.

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EOL 23/Dec/2016(PCN Obsolescence/ EOL)
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NGTB20N120IHSWG(Datasheets)

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