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ON Semiconductor NGTB10N60FG

NGTB10N60FG ON Semiconductor
ON Semiconductor

Product Information

Gate Charge:
55nC
Base Part Number:
NGTB10
Detailed Description:
IGBT 600V 20A 40W Through Hole TO-220F-3FS
Reverse Recovery Time (trr):
70ns
Mounting Type:
Through Hole
Current - Collector (Ic) (Max):
20A
Vce(on) (Max) @ Vge, Ic:
1.7V @ 15V, 10A
Operating Temperature:
150°C (TJ)
Supplier Device Package:
TO-220F-3FS
Packaging:
Tube
Td (on/off) @ 25°C:
40ns/145ns
Power - Max:
40W
Customer Reference:
Input Type:
Standard
Package / Case:
TO-220-3 Full Pack
Voltage - Collector Emitter Breakdown (Max):
600V
Test Condition:
300V, 10A, 30Ohm, 15V
Current - Collector Pulsed (Icm):
72A
Manufacturer:
ON Semiconductor
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is NGTB10N60FG. Features 55nc gate charge. Base Part Number: ngtb10. It features igbt 600v 20a 40w through hole to-220f-3fs. It has a trr (reverse recovery time) of 70ns. The product is available in through hole configuration. The maximum collector current includes 20a. Features 1.7v @ 15v, 10a. The product has 150°c (tj) operating temperature range. to-220f-3fs is the supplier device package value. In addition, tube is the available packaging type of the product. Td (on/off) value of 40ns/145ns. The maximum power of the product is 40w. It carries standard input type. Moreover, the product comes in to-220-3 full pack. The maximum collector emitter breakdown voltage of the product is 600v. Test condition included 300v, 10a, 30ohm, 15v. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The on semiconductor's product offers user-desired applications.

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Mold compound change 17/Apr/2020(PCN Assembly/Origin)
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Mult Dev EOL 7/Apr/2021(PCN Obsolescence/ EOL)
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NGTB10N60FG(Datasheets)

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