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This is manufactured by Microsemi Corporation. The manufacturer part number is APT75GN120B2G. Features 425nc gate charge. Td (on/off) value of 60ns/620ns. It features igbt trench field stop 1200v 200a 833w through hole. The product is available in through hole configuration. The maximum collector current includes 200a. Features 2.1v @ 15v, 75a. The maximum collector emitter breakdown voltage of the product is 1200v. In addition, tube is the available packaging type of the product. Provide switching energy up to 8045µj (on), 7640µj (off). The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 833w. It carries standard input type. Moreover, the product comes in to-247-3 variant. Features an IGBT trench field stop type. Test condition included 800v, 75a, 1ohm, 15v. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The microsemi corporation's product offers user-desired applications.
Discover our top brands and the latest innovation in supplying electrical and electronic innovative Microsemi Corporation APT75GN120B2G all over the world. Save an amazing 20% on, get exclusive rewards, and exceptional support, and ignite your passion for Transistors - IGBTs - Single. An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device such as Microsemi Corporation APT75GN120B2G principally used as an electronic switch that evolved to combine high efficiency and quick switching as it was developed at ET12634877. Purchase from Enrgtech, discount automatically added on most Transistors - IGBTs - Single at cart.
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