Microsemi Corporation APT68GA60B2D40

APT68GA60B2D40 Microsemi Corporation
Microsemi Corporation

Product Information

Gate Charge:
198nC
Td (on/off) @ 25°C:
21ns/133ns
Detailed Description:
IGBT PT 600V 121A 520W Through Hole
Mounting Type:
Through Hole
Current - Collector (Ic) (Max):
121A
Series:
POWER MOS 8™
Vce(on) (Max) @ Vge, Ic:
2.5V @ 15V, 40A
Voltage - Collector Emitter Breakdown (Max):
600V
Manufacturer Standard Lead Time:
25 Weeks
Packaging:
Tube
Switching Energy:
715µJ (on), 607µJ (off)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
520W
Input Type:
Standard
Package / Case:
TO-247-3 Variant
IGBT Type:
PT
Test Condition:
400V, 40A, 4.7Ohm, 15V
Current - Collector Pulsed (Icm):
202A
Manufacturer:
Microsemi Corporation
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This is manufactured by Microsemi Corporation. The manufacturer part number is APT68GA60B2D40. Features 198nc gate charge. Td (on/off) value of 21ns/133ns. It features igbt pt 600v 121a 520w through hole. The product is available in through hole configuration. The maximum collector current includes 121a. The product power mos 8™, is a highly preferred choice for users. Features 2.5v @ 15v, 40a. The maximum collector emitter breakdown voltage of the product is 600v. It has typical 25 weeks of manufacturer standard lead time. In addition, tube is the available packaging type of the product. Provide switching energy up to 715µj (on), 607µj (off). The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 520w. It carries standard input type. Moreover, the product comes in to-247-3 variant. Features an IGBT pt type. Test condition included 400v, 40a, 4.7ohm, 15v. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The microsemi corporation's product offers user-desired applications.

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