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This is manufactured by Microsemi Corporation. The manufacturer part number is APT44GA60BD30. Features 128nc gate charge. Td (on/off) value of 16ns/84ns. It features igbt pt 600v 78a 337w through hole to-247 [b]. The product is available in through hole configuration. The maximum collector current includes 78a. The product power mos 8™, is a highly preferred choice for users. Features 2.5v @ 15v, 26a. to-247 [b] is the supplier device package value. It has typical 29 weeks of manufacturer standard lead time. The maximum collector emitter breakdown voltage of the product is 600v. In addition, tube is the available packaging type of the product. Provide switching energy up to 409µj (on), 258µj (off). The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 337w. It carries standard input type. Moreover, the product comes in to-247-3. Features an IGBT pt type. Test condition included 400v, 26a, 4.7ohm, 15v. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The microsemi corporation's product offers user-desired applications.
Discover our top brands and the latest innovation in supplying electrical and electronic innovative Microsemi Corporation APT44GA60BD30 all over the world. Save an amazing 20% on, get exclusive rewards, and exceptional support, and ignite your passion for Transistors - IGBTs - Single. An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device such as Microsemi Corporation APT44GA60BD30 principally used as an electronic switch that evolved to combine high efficiency and quick switching as it was developed at ET12634850. Purchase from Enrgtech, discount automatically added on most Transistors - IGBTs - Single at cart.
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