Microsemi Corporation APT30GP60BG

APT30GP60BG Microsemi Corporation
APT30GP60BG
Microsemi Corporation

Product Information

Gate Charge:
90nC
Td (on/off) @ 25°C:
13ns/55ns
Detailed Description:
IGBT PT 600V 100A 463W Through Hole TO-247 [B]
Mounting Type:
Through Hole
Current - Collector (Ic) (Max):
100A
Series:
POWER MOS 7®
Vce(on) (Max) @ Vge, Ic:
2.7V @ 15V, 30A
Supplier Device Package:
TO-247 [B]
Voltage - Collector Emitter Breakdown (Max):
600V
Packaging:
Tube
Switching Energy:
260µJ (on), 250µJ (off)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
463W
Input Type:
Standard
Package / Case:
TO-247-3
IGBT Type:
PT
Test Condition:
400V, 30A, 5Ohm, 15V
Current - Collector Pulsed (Icm):
100A
Manufacturer:
Microsemi Corporation
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This is manufactured by Microsemi Corporation. The manufacturer part number is APT30GP60BG. Features 90nc gate charge. Td (on/off) value of 13ns/55ns. It features igbt pt 600v 100a 463w through hole to-247 [b]. The product is available in through hole configuration. The maximum collector current includes 100a. The product power mos 7®, is a highly preferred choice for users. Features 2.7v @ 15v, 30a. to-247 [b] is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 600v. In addition, tube is the available packaging type of the product. Provide switching energy up to 260µj (on), 250µj (off). The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 463w. It carries standard input type. Moreover, the product comes in to-247-3. Features an IGBT pt type. Test condition included 400v, 30a, 5ohm, 15v. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The microsemi corporation's product offers user-desired applications.

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