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This is manufactured by Microsemi Corporation. The manufacturer part number is APT30GN60BG. Features 165nc gate charge. Td (on/off) value of 12ns/155ns. It features igbt trench field stop 600v 63a 203w through hole to-247 [b]. The product is available in through hole configuration. The maximum collector current includes 63a. Features 1.9v @ 15v, 30a. to-247 [b] is the supplier device package value. It has typical 24 weeks of manufacturer standard lead time. The maximum collector emitter breakdown voltage of the product is 600v. In addition, tube is the available packaging type of the product. Provide switching energy up to 525µj (on), 700µj (off). The product has -55°c ~ 175°c (tj) operating temperature range. The maximum power of the product is 203w. It carries standard input type. Moreover, the product comes in to-247-3. Features an IGBT trench field stop type. Test condition included 400v, 30a, 4.3ohm, 15v. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The microsemi corporation's product offers user-desired applications.
Discover our top brands and the latest innovation in supplying electrical and electronic innovative Microsemi Corporation APT30GN60BG all over the world. Save an amazing 20% on, get exclusive rewards, and exceptional support, and ignite your passion for Transistors - IGBTs - Single. An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device such as Microsemi Corporation APT30GN60BG principally used as an electronic switch that evolved to combine high efficiency and quick switching as it was developed at ET12634839. Purchase from Enrgtech, discount automatically added on most Transistors - IGBTs - Single at cart.
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