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This is manufactured by Microsemi Corporation. The manufacturer part number is APT25GP90BG. Features 110nc gate charge. Td (on/off) value of 13ns/55ns. It features igbt pt 900v 72a 417w through hole to-247 [b]. The product is available in through hole configuration. The maximum collector current includes 72a. The product power mos 7®, is a highly preferred choice for users. Features 3.9v @ 15v, 25a. to-247 [b] is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 900v. In addition, tube is the available packaging type of the product. Provide switching energy up to 370µj (off). The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 417w. It carries standard input type. Moreover, the product comes in to-247-3. Features an IGBT pt type. Test condition included 600v, 25a, 5ohm, 15v. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The microsemi corporation's product offers user-desired applications.
Discover our top brands and the latest innovation in supplying electrical and electronic innovative Microsemi Corporation APT25GP90BG all over the world. Save an amazing 20% on, get exclusive rewards, and exceptional support, and ignite your passion for Transistors - IGBTs - Single. An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device such as Microsemi Corporation APT25GP90BG principally used as an electronic switch that evolved to combine high efficiency and quick switching as it was developed at ET12634833. Purchase from Enrgtech, discount automatically added on most Transistors - IGBTs - Single at cart.
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