Microsemi Corporation APT13GP120BDQ1G

APT13GP120BDQ1G Microsemi Corporation
APT13GP120BDQ1G
Microsemi Corporation

Product Information

Gate Charge:
55nC
Td (on/off) @ 25°C:
9ns/28ns
Detailed Description:
IGBT PT 1200V 41A 250W Through Hole TO-247 [B]
Mounting Type:
Through Hole
Current - Collector (Ic) (Max):
41A
Series:
POWER MOS 7®
Vce(on) (Max) @ Vge, Ic:
3.9V @ 15V, 13A
Supplier Device Package:
TO-247 [B]
Manufacturer Standard Lead Time:
33 Weeks
Voltage - Collector Emitter Breakdown (Max):
1200V
Packaging:
Tube
Switching Energy:
115µJ (on), 165µJ (off)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
250W
Input Type:
Standard
Package / Case:
TO-247-3
IGBT Type:
PT
Test Condition:
600V, 13A, 5Ohm, 15V
Current - Collector Pulsed (Icm):
50A
Manufacturer:
Microsemi Corporation
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This is manufactured by Microsemi Corporation. The manufacturer part number is APT13GP120BDQ1G. Features 55nc gate charge. Td (on/off) value of 9ns/28ns. It features igbt pt 1200v 41a 250w through hole to-247 [b]. The product is available in through hole configuration. The maximum collector current includes 41a. The product power mos 7®, is a highly preferred choice for users. Features 3.9v @ 15v, 13a. to-247 [b] is the supplier device package value. It has typical 33 weeks of manufacturer standard lead time. The maximum collector emitter breakdown voltage of the product is 1200v. In addition, tube is the available packaging type of the product. Provide switching energy up to 115µj (on), 165µj (off). The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 250w. It carries standard input type. Moreover, the product comes in to-247-3. Features an IGBT pt type. Test condition included 600v, 13a, 5ohm, 15v. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The microsemi corporation's product offers user-desired applications.

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