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Microsemi Corporation APT100GT60B2RG

APT100GT60B2RG Microsemi Corporation
Microsemi Corporation

Product Information

Gate Charge:
460nC
Td (on/off) @ 25°C:
40ns/320ns
Detailed Description:
IGBT NPT 600V 148A 500W Through Hole
Mounting Type:
Through Hole
Current - Collector (Ic) (Max):
148A
Series:
Thunderbolt IGBT®
Vce(on) (Max) @ Vge, Ic:
2.5V @ 15V, 100A
Voltage - Collector Emitter Breakdown (Max):
600V
Packaging:
Tube
Switching Energy:
3.25mJ (on), 3.125mJ (off)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
500W
Input Type:
Standard
Package / Case:
TO-247-3 Variant
IGBT Type:
NPT
Test Condition:
400V, 100A, 4.3Ohm, 15V
Current - Collector Pulsed (Icm):
300A
Manufacturer:
Microsemi Corporation
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This is manufactured by Microsemi Corporation. The manufacturer part number is APT100GT60B2RG. Features 460nc gate charge. Td (on/off) value of 40ns/320ns. It features igbt npt 600v 148a 500w through hole. The product is available in through hole configuration. The maximum collector current includes 148a. The product thunderbolt igbt®, is a highly preferred choice for users. Features 2.5v @ 15v, 100a. The maximum collector emitter breakdown voltage of the product is 600v. In addition, tube is the available packaging type of the product. Provide switching energy up to 3.25mj (on), 3.125mj (off). The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 500w. It carries standard input type. Moreover, the product comes in to-247-3 variant. Features an IGBT npt type. Test condition included 400v, 100a, 4.3ohm, 15v. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The microsemi corporation's product offers user-desired applications.

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