Dimensions:
16.25 x 5.3 x 21.4mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
535 W
Maximum Collector Emitter Voltage:
1200 V
Channel Type:
N
Maximum Continuous Collector Current:
100 A
Maximum Gate Emitter Voltage:
±20V
Package Type:
TO-247
Minimum Operating Temperature:
-55 °C
Switching Speed:
1MHz
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
24 Weeks
Current - Collector (Ic) (Max):
100A
Detailed Description:
IGBT Trench Field Stop 1200V 100A 535W Through Hole TO-247
Vce(on) (Max) @ Vge, Ic:
2.2V @ 15V, 50A
Td (on/off) @ 25°C:
118ns/282ns
Operating Temperature:
-55°C ~ 175°C (TJ)
Input Type:
Standard
Package / Case:
TO-247-3
Gate Charge:
311nC
Base Part Number:
NGTB50
Voltage - Collector Emitter Breakdown (Max):
1200V
Reverse Recovery Time (trr):
256ns
Switching Energy:
4.4mJ (on), 1.4mJ (off)
Test Condition:
600V, 50A, 10Ohm, 15V
Manufacturer:
ON Semiconductor
IGBT Type:
Trench Field Stop
Current - Collector Pulsed (Icm):
200A
Mounting Type:
Through Hole
Supplier Device Package:
TO-247
Packaging:
Tube
Power - Max:
535W
Customer Reference:
