Dimensions:
10.4 x 9.35 x 4.6mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
258 W
Maximum Collector Emitter Voltage:
650 V
Channel Type:
N
Maximum Continuous Collector Current:
60 A
Maximum Gate Emitter Voltage:
±20V
Package Type:
D2PAK (TO-263)
Minimum Operating Temperature:
-55 °C
Gate Capacitance:
2490pF
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Energy Rating:
2.03mJ
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
60 A
Reverse Recovery Time (trr):
140 ns
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Switching Energy:
300µJ (on), 960µJ (off)
Vce(on) (Max) @ Vge, Ic:
2V @ 15V, 30A
Voltage - Collector Emitter Breakdown (Max):
650 V
Td (on/off) @ 25°C:
31.6ns/115ns
Operating Temperature:
-55°C ~ 175°C (TJ)
Input Type:
Standard
Package / Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Gate Charge:
80 nC
REACH Status:
REACH Unaffected
edacadModel:
STGB30M65DF2 Models
edacadModelUrl:
/en/models/5305264
Test Condition:
400V, 30A, 10Ohm, 15V
Package:
Tape & Reel (TR)
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
18 Weeks
IGBT Type:
Trench Field Stop
Current - Collector Pulsed (Icm):
120 A
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
TO-263 (D2PAK)
Power - Max:
258 W
Base Product Number:
STGB30
ECCN:
EAR99
