Microsemi Corporation APT50GS60BRDQ2G

APT50GS60BRDQ2G Microsemi Corporation
APT50GS60BRDQ2G
Microsemi Corporation

Product Information

Manufacturer Standard Lead Time:
25 Weeks
Current - Collector (Ic) (Max):
93A
Detailed Description:
IGBT NPT 600V 93A 415W Through Hole TO-247 [B]
Vce(on) (Max) @ Vge, Ic:
3.15V @ 15V, 50A
Td (on/off) @ 25°C:
16ns/225ns
Operating Temperature:
-55°C ~ 150°C (TJ)
Input Type:
Standard
Package / Case:
TO-247-3
Gate Charge:
235nC
Voltage - Collector Emitter Breakdown (Max):
600V
Reverse Recovery Time (trr):
25ns
Switching Energy:
755µJ (off)
Test Condition:
400V, 40A, 4.7Ohm, 15V
Manufacturer:
Microsemi Corporation
IGBT Type:
NPT
Current - Collector Pulsed (Icm):
195A
Mounting Type:
Through Hole
Series:
Thunderbolt IGBT®
Supplier Device Package:
TO-247 [B]
Packaging:
Tube
Power - Max:
415W
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This is manufactured by Microsemi Corporation. The manufacturer part number is APT50GS60BRDQ2G. It has typical 25 weeks of manufacturer standard lead time. The maximum collector current includes 93a. It features igbt npt 600v 93a 415w through hole to-247 [b]. Features 3.15v @ 15v, 50a. Td (on/off) value of 16ns/225ns. The product has -55°c ~ 150°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-247-3. Features 235nc gate charge. The maximum collector emitter breakdown voltage of the product is 600v. It has a trr (reverse recovery time) of 25ns. Provide switching energy up to 755µj (off). Test condition included 400v, 40a, 4.7ohm, 15v. The microsemi corporation's product offers user-desired applications. Features an IGBT npt type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The product is available in through hole configuration. The product thunderbolt igbt®, is a highly preferred choice for users. to-247 [b] is the supplier device package value. In addition, tube is the available packaging type of the product. The maximum power of the product is 415w.

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