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This is manufactured by Microsemi Corporation. The manufacturer part number is APT33GF120BRG. Features 170nc gate charge. Td (on/off) value of 25ns/210ns. It features igbt npt 1200v 52a 297w through hole to-247 [b]. The product is available in through hole configuration. The maximum collector current includes 52a. Features 3.2v @ 15v, 25a. to-247 [b] is the supplier device package value. It has typical 24 weeks of manufacturer standard lead time. The maximum collector emitter breakdown voltage of the product is 1200v. In addition, tube is the available packaging type of the product. Provide switching energy up to 2.8mj (on), 2.8mj (off). The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 297w. It carries standard input type. Moreover, the product comes in to-247-3. Features an IGBT npt type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The microsemi corporation's product offers user-desired applications.
Discover our top brands and the latest innovation in supplying electrical and electronic innovative Microsemi Corporation APT33GF120BRG all over the world. Save an amazing 20% on, get exclusive rewards, and exceptional support, and ignite your passion for Transistors - IGBTs - Single. An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device such as Microsemi Corporation APT33GF120BRG principally used as an electronic switch that evolved to combine high efficiency and quick switching as it was developed at ET12044156. Purchase from Enrgtech, discount automatically added on most Transistors - IGBTs - Single at cart.
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