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This is manufactured by Microsemi Corporation. The manufacturer part number is APT70GR65B. Features 305nc gate charge. Td (on/off) value of 19ns/170ns. It features igbt npt 650v 134a 595w through hole to-247. The product is available in through hole configuration. The maximum collector current includes 134a. Features 2.4v @ 15v, 70a. to-247 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 650v. In addition, tube is the available packaging type of the product. Provide switching energy up to 1.51mj (on), 1.46mj (off). The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 595w. It carries standard input type. Moreover, the product comes in to-247-3. Features an IGBT npt type. Test condition included 433v, 70a, 4.3ohm, 15v. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The microsemi corporation's product offers user-desired applications.
Discover our top brands and the latest innovation in supplying electrical and electronic innovative Microsemi Corporation APT70GR65B all over the world. Save an amazing 20% on, get exclusive rewards, and exceptional support, and ignite your passion for Transistors - IGBTs - Single. An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device such as Microsemi Corporation APT70GR65B principally used as an electronic switch that evolved to combine high efficiency and quick switching as it was developed at ET12016693. Purchase from Enrgtech, discount automatically added on most Transistors - IGBTs - Single at cart.
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