Deliver to
United Kingdom
This is manufactured by Microsemi Corporation. The manufacturer part number is APT95GR65B2. Features 420nc gate charge. Td (on/off) value of 29ns/226ns. It features igbt npt 650v 208a 892w through hole t-max™ [b2]. The product is available in through hole configuration. The maximum collector current includes 208a. Features 2.4v @ 15v, 95a. t-max™ [b2] is the supplier device package value. It has typical 35 weeks of manufacturer standard lead time. The maximum collector emitter breakdown voltage of the product is 650v. In addition, tube is the available packaging type of the product. Provide switching energy up to 3.12mj (on), 2.55mj (off). The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 892w. It carries standard input type. Moreover, the product comes in to-247-3. Features an IGBT npt type. Test condition included 433v, 95a, 4.3ohm, 15v. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The microsemi corporation's product offers user-desired applications.
Discover our top brands and the latest innovation in supplying electrical and electronic innovative Microsemi Corporation APT95GR65B2 all over the world. Save an amazing 20% on, get exclusive rewards, and exceptional support, and ignite your passion for Transistors - IGBTs - Single. An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device such as Microsemi Corporation APT95GR65B2 principally used as an electronic switch that evolved to combine high efficiency and quick switching as it was developed at ET11993891. Purchase from Enrgtech, discount automatically added on most Transistors - IGBTs - Single at cart.
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