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This is manufactured by ON Semiconductor. The manufacturer part number is NGTG15N60S1EG. The given dimensions of the product include 10.28 x 4.82 x 15.75mm. The product is available in through hole configuration. Provides up to 117 w maximum power dissipation. The product has a maximum 30 a continuous collector current . Whereas features a 600 v of collector emitter voltage (max). In addition, the height is 15.75mm. Furthermore, the product is 4.82mm wide. Its accurate length is 10.28mm. It offers a maximum ±20v gate emitter voltage . The package is a sort of to-220. Whereas, the minimum operating temperature of the product is -55 °c. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. Features 88nc gate charge. Base Part Number: ngtg15. It features igbt npt 600v 30a 117w through hole to-220ab. The maximum collector current includes 30a. Features 1.7v @ 15v, 15a. The product has -55°c ~ 150°c (tj) operating temperature range. to-220ab is the supplier device package value. In addition, tube is the available packaging type of the product. Provide switching energy up to 550µj (on), 350µj (off). Td (on/off) value of 65ns/170ns. The maximum power of the product is 117w. It carries standard input type. Moreover, the product comes in to-220-3. The maximum collector emitter breakdown voltage of the product is 600v. Features an IGBT npt type. Test condition included 400v, 15a, 22ohm, 15v. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The on semiconductor's product offers user-desired applications.
For more information please check the datasheets.
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