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This is manufactured by Microsemi Corporation. The manufacturer part number is APT45GP120B2DQ2G. Features 185nc gate charge. Td (on/off) value of 18ns/100ns. It features igbt pt 1200v 113a 625w through hole. The product is available in through hole configuration. The maximum collector current includes 113a. The product power mos 7®, is a highly preferred choice for users. Features 3.9v @ 15v, 45a. The maximum collector emitter breakdown voltage of the product is 1200v. It has typical 33 weeks of manufacturer standard lead time. In addition, tube is the available packaging type of the product. Provide switching energy up to 900µj (on), 905µj (off). The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 625w. It carries standard input type. Moreover, the product comes in to-247-3 variant. Features an IGBT pt type. Test condition included 600v, 45a, 5ohm, 15v. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The microsemi corporation's product offers user-desired applications.
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