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This is manufactured by Microsemi Corporation. The manufacturer part number is APT50GN120L2DQ2G. Features 315nc gate charge. Td (on/off) value of 28ns/320ns. It features igbt npt, trench field stop 1200v 134a 543w through hole. The product is available in through hole configuration. The maximum collector current includes 134a. Features 2.1v @ 15v, 50a. The maximum collector emitter breakdown voltage of the product is 1200v. It has typical 29 weeks of manufacturer standard lead time. In addition, tube is the available packaging type of the product. Provide switching energy up to 4495µj (off). The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 543w. It carries standard input type. Moreover, the product comes in to-264-3, to-264aa. Features an IGBT npt, trench field stop type. Test condition included 800v, 50a, 2.2ohm, 15v. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The microsemi corporation's product offers user-desired applications.
Discover our top brands and the latest innovation in supplying electrical and electronic innovative Microsemi Corporation APT50GN120L2DQ2G all over the world. Save an amazing 20% on, get exclusive rewards, and exceptional support, and ignite your passion for Transistors - IGBTs - Single. An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device such as Microsemi Corporation APT50GN120L2DQ2G principally used as an electronic switch that evolved to combine high efficiency and quick switching as it was developed at ET11928274. Purchase from Enrgtech, discount automatically added on most Transistors - IGBTs - Single at cart.
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