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This is manufactured by Microsemi Corporation. The manufacturer part number is APT33GF120B2RDQ2G. Features 170nc gate charge. Td (on/off) value of 14ns/185ns. It features igbt npt 1200v 64a 357w through hole. The product is available in through hole configuration. The maximum collector current includes 64a. Features 3v @ 15v, 25a. The maximum collector emitter breakdown voltage of the product is 1200v. It has typical 29 weeks of manufacturer standard lead time. In addition, tube is the available packaging type of the product. Provide switching energy up to 1.315mj (on), 1.515mj (off). The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 357w. It carries standard input type. Moreover, the product comes in to-247-3 variant. Features an IGBT npt type. Test condition included 800v, 25a, 4.3ohm, 15v. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The microsemi corporation's product offers user-desired applications.
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