Microsemi Corporation APT35GN120L2DQ2G

APT35GN120L2DQ2G Microsemi Corporation
APT35GN120L2DQ2G
Microsemi Corporation

Product Information

Gate Charge:
220nC
Td (on/off) @ 25°C:
24ns/300ns
Detailed Description:
IGBT NPT, Trench Field Stop 1200V 94A 379W Through Hole
Mounting Type:
Through Hole
Current - Collector (Ic) (Max):
94A
Vce(on) (Max) @ Vge, Ic:
2.1V @ 15V, 35A
Voltage - Collector Emitter Breakdown (Max):
1200V
Manufacturer Standard Lead Time:
29 Weeks
Packaging:
Tube
Switching Energy:
2.315mJ (off)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
379W
Input Type:
Standard
Package / Case:
TO-264-3, TO-264AA
IGBT Type:
NPT, Trench Field Stop
Test Condition:
800V, 35A, 2.2Ohm, 15V
Current - Collector Pulsed (Icm):
105A
Manufacturer:
Microsemi Corporation
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This is manufactured by Microsemi Corporation. The manufacturer part number is APT35GN120L2DQ2G. Features 220nc gate charge. Td (on/off) value of 24ns/300ns. It features igbt npt, trench field stop 1200v 94a 379w through hole. The product is available in through hole configuration. The maximum collector current includes 94a. Features 2.1v @ 15v, 35a. The maximum collector emitter breakdown voltage of the product is 1200v. It has typical 29 weeks of manufacturer standard lead time. In addition, tube is the available packaging type of the product. Provide switching energy up to 2.315mj (off). The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 379w. It carries standard input type. Moreover, the product comes in to-264-3, to-264aa. Features an IGBT npt, trench field stop type. Test condition included 800v, 35a, 2.2ohm, 15v. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The microsemi corporation's product offers user-desired applications.

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