STMicroelectronics STGB10H60DF

STGB10H60DF STMicroelectronics
STGB10H60DF
STGB10H60DF
ET11684983
STMicroelectronics

Product Information

Dimensions:
10.4 x 9.35 x 4.6mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
115 W
Maximum Collector Emitter Voltage:
600 V
Channel Type:
N
Maximum Continuous Collector Current:
20 A
Maximum Gate Emitter Voltage:
±20V
Package Type:
D2PAK (TO-263)
Minimum Operating Temperature:
-55 °C
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
20 A
Reverse Recovery Time (trr):
107 ns
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Switching Energy:
83µJ (on), 140µJ (off)
Vce(on) (Max) @ Vge, Ic:
1.95V @ 15V, 10A
Voltage - Collector Emitter Breakdown (Max):
600 V
Td (on/off) @ 25°C:
19.5ns/103ns
Operating Temperature:
-55°C ~ 175°C (TJ)
Input Type:
Standard
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Gate Charge:
57 nC
REACH Status:
REACH Unaffected
edacadModel:
STGB10H60DF Models
edacadModelUrl:
/en/models/5018861
Test Condition:
400V, 10A, 10Ohm, 15V
Package:
Tape & Reel (TR)
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
20 Weeks
IGBT Type:
Trench Field Stop
Current - Collector Pulsed (Icm):
40 A
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
D²PAK (TO-263)
Power - Max:
115 W
Base Product Number:
STGB10
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is manufactured by STMicroelectronics. The manufacturer part number is STGB10H60DF. The given dimensions of the product include 10.4 x 9.35 x 4.6mm. The product is available in surface mount configuration. Provides up to 115 w maximum power dissipation. Whereas features a 600 v of collector emitter voltage (max). The product is available in [Cannel Type] channel. The product has a maximum 20 a continuous collector current . It offers a maximum ±20v gate emitter voltage . The package is a sort of d2pak (to-263). Whereas, the minimum operating temperature of the product is -55 °c. It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers single transistor configuration. The maximum collector current includes 20 a. It has a trr (reverse recovery time) of 107 ns. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. Provide switching energy up to 83µj (on), 140µj (off). Features 1.95v @ 15v, 10a. The maximum collector emitter breakdown voltage of the product is 600 v. Td (on/off) value of 19.5ns/103ns. The product has -55°c ~ 175°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-263-3, d²pak (2 leads + tab), to-263ab. Features 57 nc gate charge. In addition, it is reach unaffected. Test condition included 400v, 10a, 10ohm, 15v. It is shipped in tape & reel (tr) package . Its typical moisture sensitivity level is 1 (unlimited). It has a long 20 weeks standard lead time. Features an IGBT trench field stop type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . d²pak (to-263) is the supplier device package value. The maximum power of the product is 115 w. Moreover, it corresponds to stgb10, a base product number of the product. The product is designated with the ear99 code number.

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STGB10H60DF, STGF10H60DF, STGP10H60DF, Trench Gate Field-Stop IGBT, H Series 600V, 10A High Speed(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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IGBT/IPM TFS A/T Add 22/Oct/2021(PCN Assembly/Origin)
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STGx10H60DF(Datasheets)
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Mult Dev Inner Box Chg 9/Dec/2021(PCN Packaging)

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