Maximum Continuous Collector Current:
20 A
Dimensions:
10.4 x 9.35 x 4.6mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
115 W
Maximum Operating Temperature:
+175 °C
Maximum Collector Emitter Voltage:
650 V
Height:
4.6mm
Width:
9.35mm
Length:
10.4mm
Maximum Gate Emitter Voltage:
±20V
Package Type:
D2PAK (TO-263)
Energy Rating:
0.66mJ
Minimum Operating Temperature:
-55 °C
Channel Type:
N
Gate Capacitance:
840pF
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
20 A
Reverse Recovery Time (trr):
96 ns
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Vce(on) (Max) @ Vge, Ic:
2V @ 15V, 10A
Voltage - Collector Emitter Breakdown (Max):
650 V
Td (on/off) @ 25°C:
19ns/91ns
Operating Temperature:
-55°C ~ 175°C (TJ)
Input Type:
Standard
Package / Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Gate Charge:
28 nC
title:
STGB10M65DF2
REACH Status:
REACH Unaffected
edacadModel:
STGB10M65DF2 Models
Switching Energy:
120µJ (on), 270µJ (off)
edacadModelUrl:
/en/models/5305263
Test Condition:
400V, 10A, 22Ohm, 15V
Manufacturer:
STMicroelectronics
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
15 Weeks
IGBT Type:
Trench Field Stop
Current - Collector Pulsed (Icm):
40 A
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
TO-263 (D2PAK)
Packaging:
Tape & Reel (TR)
Power - Max:
115 W
Base Product Number:
STGB10
ECCN:
EAR99
