Microsemi Corporation APT50GN60BG

APT50GN60BG Microsemi Corporation
APT50GN60BG
Microsemi Corporation

Product Information

Gate Charge:
325nC
Td (on/off) @ 25°C:
20ns/230ns
Detailed Description:
IGBT Trench Field Stop 600V 107A 366W Through Hole TO-247 [B]
Mounting Type:
Through Hole
Current - Collector (Ic) (Max):
107A
Vce(on) (Max) @ Vge, Ic:
1.85V @ 15V, 50A
Supplier Device Package:
TO-247 [B]
Manufacturer Standard Lead Time:
24 Weeks
Voltage - Collector Emitter Breakdown (Max):
600V
Packaging:
Tube
Switching Energy:
1185µJ (on), 1565µJ (off)
Operating Temperature:
-55°C ~ 175°C (TJ)
Power - Max:
366W
Input Type:
Standard
Package / Case:
TO-247-3
IGBT Type:
Trench Field Stop
Test Condition:
400V, 50A, 4.3Ohm, 15V
Current - Collector Pulsed (Icm):
150A
Manufacturer:
Microsemi Corporation
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This is manufactured by Microsemi Corporation. The manufacturer part number is APT50GN60BG. Features 325nc gate charge. Td (on/off) value of 20ns/230ns. It features igbt trench field stop 600v 107a 366w through hole to-247 [b]. The product is available in through hole configuration. The maximum collector current includes 107a. Features 1.85v @ 15v, 50a. to-247 [b] is the supplier device package value. It has typical 24 weeks of manufacturer standard lead time. The maximum collector emitter breakdown voltage of the product is 600v. In addition, tube is the available packaging type of the product. Provide switching energy up to 1185µj (on), 1565µj (off). The product has -55°c ~ 175°c (tj) operating temperature range. The maximum power of the product is 366w. It carries standard input type. Moreover, the product comes in to-247-3. Features an IGBT trench field stop type. Test condition included 400v, 50a, 4.3ohm, 15v. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The microsemi corporation's product offers user-desired applications.

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