STMicroelectronics STGWA30M65DF2

STGWA30M65DF2 STMicroelectronics
STGWA30M65DF2
STGWA30M65DF2
STMicroelectronics

Product Information

Dimensions:
15.9 x 5.1 x 21.1mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
258 W
Maximum Collector Emitter Voltage:
650 V
Channel Type:
N
Maximum Continuous Collector Current:
60 A
Maximum Gate Emitter Voltage:
±20V
Package Type:
TO-247
Minimum Operating Temperature:
-55 °C
Gate Capacitance:
2490pF
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Energy Rating:
2.03mJ
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
60 A
Reverse Recovery Time (trr):
140 ns
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Vce(on) (Max) @ Vge, Ic:
2V @ 15V, 30A
Voltage - Collector Emitter Breakdown (Max):
650 V
Td (on/off) @ 25°C:
31.6ns/115ns
Operating Temperature:
-55°C ~ 175°C (TJ)
Input Type:
Standard
Package / Case:
TO-247-3
Gate Charge:
80 nC
title:
STGWA30M65DF2
REACH Status:
REACH Unaffected
edacadModel:
STGWA30M65DF2 Models
Switching Energy:
300µJ (on), 960µJ (off)
edacadModelUrl:
/en/models/5305269
Test Condition:
400V, 30A, 10Ohm, 15V
Manufacturer:
STMicroelectronics
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
15 Weeks
IGBT Type:
Trench Field Stop
Current - Collector Pulsed (Icm):
120 A
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-247 Long Leads
Packaging:
Tube
Power - Max:
258 W
Base Product Number:
STGWA30
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is manufactured by STMicroelectronics. The manufacturer part number is STGWA30M65DF2. The given dimensions of the product include 15.9 x 5.1 x 21.1mm. The product is available in through hole configuration. Provides up to 258 w maximum power dissipation. Whereas features a 650 v of collector emitter voltage (max). The product is available in [Cannel Type] channel. The product has a maximum 60 a continuous collector current . It offers a maximum ±20v gate emitter voltage . The package is a sort of to-247. Whereas, the minimum operating temperature of the product is -55 °c. It has approximately 2490pf gate capacitance . It has a maximum operating temperature of +175 °c. It contains 3 pins. It has approximately 2.03mj energy rating . The product offers single transistor configuration. The maximum collector current includes 60 a. It has a trr (reverse recovery time) of 140 ns. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. Features 2v @ 15v, 30a. The maximum collector emitter breakdown voltage of the product is 650 v. Td (on/off) value of 31.6ns/115ns. The product has -55°c ~ 175°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-247-3. Features 80 nc gate charge. In addition, it is reach unaffected. Provide switching energy up to 300µj (on), 960µj (off). Test condition included 400v, 30a, 10ohm, 15v. The stmicroelectronics's product offers user-desired applications. Its typical moisture sensitivity level is 1 (unlimited). It has a long 15 weeks standard lead time. Features an IGBT trench field stop type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . to-247 long leads is the supplier device package value. In addition, tube is the available packaging type of the product. The maximum power of the product is 258 w. Moreover, it corresponds to stgwa30, a base product number of the product. The product is designated with the ear99 code number.

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STGWA30M65DF2, Trench Gate Field-Stop IGBT, M Series 650V, 30A Low Loss(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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STGW(A)30M65DF2 Datasheet(Datasheets)

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