This is manufactured by Renesas Electronics America. The manufacturer part number is RJH1CV7DPK-00#T0. Features 166nc gate charge. Td (on/off) value of 53ns/185ns. It features igbt trench 1200v 70a 320w through hole to-3p. It has a trr (reverse recovery time) of 200ns. The product is available in through hole configuration. The maximum collector current includes 70a. Features 2.3v @ 15v, 35a. to-3p is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 1200v. In addition, tube is the available packaging type of the product. Provide switching energy up to 3.2mj (on), 2.5mj (off). The product has 150°c (tj) operating temperature range. The maximum power of the product is 320w. It carries standard input type. Moreover, the product comes in to-3p-3, sc-65-3. Features an IGBT trench type. Test condition included 600v, 35a, 5ohm, 15v. The renesas electronics america's product offers user-desired applications.
RJH1CV7DPK(Datasheets)
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This is manufactured by Renesas Electronics America. The manufacturer part number is RJH1CV7DPK-00#T0. Features 166nc gate charge. Td (on/off) value of 53ns/185ns. It features igbt trench 1200v 70a 320w through hole to-3p. It has a trr (reverse recovery time) of 200ns. The product is available in through hole configuration. The maximum collector current includes 70a. Features 2.3v @ 15v, 35a. to-3p is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 1200v. In addition, tube is the available packaging type of the product. Provide switching energy up to 3.2mj (on), 2.5mj (off). The product has 150°c (tj) operating temperature range. The maximum power of the product is 320w. It carries standard input type. Moreover, the product comes in to-3p-3, sc-65-3. Features an IGBT trench type. Test condition included 600v, 35a, 5ohm, 15v. The renesas electronics america's product offers user-desired applications.
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Don’t hesitate to ask questions for better clarification.