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This is manufactured by Microsemi Corporation. The manufacturer part number is APT200GN60B2G. Features 1180nc gate charge. Td (on/off) value of 50ns/560ns. It features igbt trench field stop 600v 283a 682w through hole. The product is available in through hole configuration. The maximum collector current includes 283a. Features 1.85v @ 15v, 200a. The maximum collector emitter breakdown voltage of the product is 600v. It has typical 24 weeks of manufacturer standard lead time. In addition, tube is the available packaging type of the product. Provide switching energy up to 13mj (on), 11mj (off). The product has -55°c ~ 175°c (tj) operating temperature range. The maximum power of the product is 682w. It carries standard input type. Moreover, the product comes in to-247-3. Features an IGBT trench field stop type. Test condition included 400v, 200a, 1ohm, 15v. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The microsemi corporation's product offers user-desired applications.
Discover our top brands and the latest innovation in supplying electrical and electronic innovative Microsemi Corporation APT200GN60B2G all over the world. Save an amazing 20% on, get exclusive rewards, and exceptional support, and ignite your passion for Transistors - IGBTs - Single. An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device such as Microsemi Corporation APT200GN60B2G principally used as an electronic switch that evolved to combine high efficiency and quick switching as it was developed at ET11178086. Purchase from Enrgtech, discount automatically added on most Transistors - IGBTs - Single at cart.
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