STMicroelectronics STGWT30V60DF

STGWT30V60DF STMicroelectronics
STGWT30V60DF
STMicroelectronics

Product Information

Dimensions:
15.7 x 5.7 x 26.7mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
258 W
Maximum Continuous Collector Current:
60 A
Maximum Collector Emitter Voltage:
600 V
Height:
26.7mm
Width:
5.7mm
Length:
15.7mm
Maximum Gate Emitter Voltage:
±20V
Package Type:
TO-3P
Minimum Operating Temperature:
-55 °C
Switching Speed:
1MHz
Channel Type:
N
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
60 A
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Switching Energy:
383µJ (on), 233µJ (off)
Vce(on) (Max) @ Vge, Ic:
2.3V @ 15V, 30A
Voltage - Collector Emitter Breakdown (Max):
600 V
Td (on/off) @ 25°C:
45ns/189ns
Operating Temperature:
-55°C ~ 175°C (TJ)
Input Type:
Standard
Package / Case:
TO-3P-3, SC-65-3
Gate Charge:
163 nC
Reverse Recovery Time (trr):
53 ns
REACH Status:
REACH Unaffected
Test Condition:
400V, 30A, 10Ohm, 15V
Package:
Tube
Moisture Sensitivity Level (MSL):
1 (Unlimited)
IGBT Type:
Trench Field Stop
Current - Collector Pulsed (Icm):
120 A
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-3P
Power - Max:
258 W
Base Product Number:
STGWT30
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is manufactured by STMicroelectronics. The manufacturer part number is STGWT30V60DF. The given dimensions of the product include 15.7 x 5.7 x 26.7mm. The product is available in through hole configuration. Provides up to 258 w maximum power dissipation. The product has a maximum 60 a continuous collector current . Whereas features a 600 v of collector emitter voltage (max). In addition, the height is 26.7mm. Furthermore, the product is 5.7mm wide. Its accurate length is 15.7mm. It offers a maximum ±20v gate emitter voltage . The package is a sort of to-3p. Whereas, the minimum operating temperature of the product is -55 °c. It has about 1mhz switching speed . The product is available in [Cannel Type] channel. It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers single transistor configuration. The maximum collector current includes 60 a. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. Provide switching energy up to 383µj (on), 233µj (off). Features 2.3v @ 15v, 30a. The maximum collector emitter breakdown voltage of the product is 600 v. Td (on/off) value of 45ns/189ns. The product has -55°c ~ 175°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-3p-3, sc-65-3. Features 163 nc gate charge. It has a trr (reverse recovery time) of 53 ns. In addition, it is reach unaffected. Test condition included 400v, 30a, 10ohm, 15v. It is shipped in tube package . Its typical moisture sensitivity level is 1 (unlimited). Features an IGBT trench field stop type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . to-3p is the supplier device package value. The maximum power of the product is 258 w. Moreover, it corresponds to stgwt30, a base product number of the product. The product is designated with the ear99 code number.

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600V, 30A Very High Speed Trench Gate Field-Stop IGBT Data Sheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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Mult Dev 7/Apr/2020(PCN Obsolescence/ EOL)
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STGx(x)30V60DF(Datasheets)

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