Microsemi Corporation APT25GT120BRDQ2G

APT25GT120BRDQ2G Microsemi Corporation
APT25GT120BRDQ2G
Microsemi Corporation

Product Information

Gate Charge:
170nC
Td (on/off) @ 25°C:
14ns/150ns
Detailed Description:
IGBT NPT 1200V 54A 347W Through Hole TO-247 [B]
Mounting Type:
Through Hole
Current - Collector (Ic) (Max):
54A
Series:
Thunderbolt IGBT®
Vce(on) (Max) @ Vge, Ic:
3.7V @ 15V, 25A
Supplier Device Package:
TO-247 [B]
Manufacturer Standard Lead Time:
29 Weeks
Voltage - Collector Emitter Breakdown (Max):
1200V
Packaging:
Tube
Switching Energy:
930µJ (on), 720µJ (off)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
347W
Input Type:
Standard
Package / Case:
TO-247-3
IGBT Type:
NPT
Test Condition:
800V, 25A, 5Ohm, 15V
Current - Collector Pulsed (Icm):
75A
Manufacturer:
Microsemi Corporation
Checking for live stock

This is manufactured by Microsemi Corporation. The manufacturer part number is APT25GT120BRDQ2G. Features 170nc gate charge. Td (on/off) value of 14ns/150ns. It features igbt npt 1200v 54a 347w through hole to-247 [b]. The product is available in through hole configuration. The maximum collector current includes 54a. The product thunderbolt igbt®, is a highly preferred choice for users. Features 3.7v @ 15v, 25a. to-247 [b] is the supplier device package value. It has typical 29 weeks of manufacturer standard lead time. The maximum collector emitter breakdown voltage of the product is 1200v. In addition, tube is the available packaging type of the product. Provide switching energy up to 930µj (on), 720µj (off). The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 347w. It carries standard input type. Moreover, the product comes in to-247-3. Features an IGBT npt type. Test condition included 800v, 25a, 5ohm, 15v. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The microsemi corporation's product offers user-desired applications.

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