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Microsemi Corporation APT80GA60B

APT80GA60B Microsemi Corporation
APT80GA60B
Microsemi Corporation

Product Information

Gate Charge:
230nC
Td (on/off) @ 25°C:
23ns/158ns
Detailed Description:
IGBT PT 600V 143A 625W Through Hole TO-247 [B]
Mounting Type:
Through Hole
Current - Collector (Ic) (Max):
143A
Vce(on) (Max) @ Vge, Ic:
2.5V @ 15V, 47A
Supplier Device Package:
TO-247 [B]
Manufacturer Standard Lead Time:
33 Weeks
Voltage - Collector Emitter Breakdown (Max):
600V
Packaging:
Tube
Switching Energy:
840µJ (on), 751µJ (off)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
625W
Input Type:
Standard
Package / Case:
TO-247-3
IGBT Type:
PT
Test Condition:
400V, 47A, 4.7Ohm, 15V
Current - Collector Pulsed (Icm):
240A
Manufacturer:
Microsemi Corporation
Checking for live stock

This is manufactured by Microsemi Corporation. The manufacturer part number is APT80GA60B. Features 230nc gate charge. Td (on/off) value of 23ns/158ns. It features igbt pt 600v 143a 625w through hole to-247 [b]. The product is available in through hole configuration. The maximum collector current includes 143a. Features 2.5v @ 15v, 47a. to-247 [b] is the supplier device package value. It has typical 33 weeks of manufacturer standard lead time. The maximum collector emitter breakdown voltage of the product is 600v. In addition, tube is the available packaging type of the product. Provide switching energy up to 840µj (on), 751µj (off). The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 625w. It carries standard input type. Moreover, the product comes in to-247-3. Features an IGBT pt type. Test condition included 400v, 47a, 4.7ohm, 15v. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The microsemi corporation's product offers user-desired applications.

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