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This is manufactured by Microsemi Corporation. The manufacturer part number is APT65GP60L2DQ2G. Features 210nc gate charge. Td (on/off) value of 30ns/90ns. It features igbt pt 600v 198a 833w through hole. The product is available in through hole configuration. The maximum collector current includes 198a. The product power mos 7®, is a highly preferred choice for users. Features 2.7v @ 15v, 65a. The maximum collector emitter breakdown voltage of the product is 600v. In addition, tube is the available packaging type of the product. Provide switching energy up to 605µj (on), 895µj (off). The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 833w. It carries standard input type. Moreover, the product comes in to-264-3, to-264aa. Features an IGBT pt type. Test condition included 400v, 65a, 5ohm, 15v. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The microsemi corporation's product offers user-desired applications.
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