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This is manufactured by Infineon Technologies. The manufacturer part number is IKW50N60T. The maximum collector current includes 80 a. It is assigned with possible HTSUS value of 0000.00.0000. Provide switching energy up to 1.2mj (on), 1.4mj (off). Features 2v @ 15v, 100a. Td (on/off) value of 26ns/299ns. The product has -40°c ~ 175°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-247-3. Features 310 nc gate charge. It has a trr (reverse recovery time) of 143 ns. The maximum collector emitter breakdown voltage of the product is 600 v. Test condition included 400v, 50a, 7ohm, 15v. It is shipped in bulk package . Features an IGBT trench field stop type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The product is available in through hole configuration. The product trenchstop™, is a highly preferred choice for users. pg-to247-3-21 is the supplier device package value. The maximum power of the product is 333 w.
Discover our top brands and the latest innovation in supplying electrical and electronic innovative Infineon Technologies IKW50N60T all over the world. Save an amazing 20% on, get exclusive rewards, and exceptional support, and ignite your passion for Transistors - IGBTs - Single. An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device such as Infineon Technologies IKW50N60T principally used as an electronic switch that evolved to combine high efficiency and quick switching as it was developed at ET10877495. Purchase from Enrgtech, discount automatically added on most Transistors - IGBTs - Single at cart.
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