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This is manufactured by Rohm Semiconductor. The manufacturer part number is RGT80TS65DGC11. The maximum collector current includes 70 a. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. Features 2.1v @ 15v, 40a. The maximum collector emitter breakdown voltage of the product is 650 v. Td (on/off) value of 34ns/119ns. The product has -40°c ~ 175°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-247-3. Features 79 nc gate charge. It has a trr (reverse recovery time) of 58 ns. In addition, it is reach unaffected. Test condition included 400v, 40a, 10ohm, 15v. The rohm semiconductor's product offers user-desired applications. Its typical moisture sensitivity level is 1 (unlimited). Features an IGBT trench field stop type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The product is available in through hole configuration. to-247n is the supplier device package value. In addition, tube is the available packaging type of the product. The maximum power of the product is 234 w. Moreover, it corresponds to rgt80, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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