Microsemi Corporation APT40GP90B2DQ2G

APT40GP90B2DQ2G Microsemi Corporation
APT40GP90B2DQ2G
Microsemi Corporation

Product Information

Gate Charge:
145nC
Td (on/off) @ 25°C:
14ns/90ns
Detailed Description:
IGBT PT 900V 101A 543W Through Hole
Mounting Type:
Through Hole
Current - Collector (Ic) (Max):
101A
Series:
POWER MOS 7®
Vce(on) (Max) @ Vge, Ic:
3.9V @ 15V, 40A
Voltage - Collector Emitter Breakdown (Max):
900V
Packaging:
Tube
Switching Energy:
795µJ (off)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
543W
Input Type:
Standard
Package / Case:
TO-247-3 Variant
IGBT Type:
PT
Test Condition:
600V, 40A, 4.3Ohm, 15V
Current - Collector Pulsed (Icm):
160A
Manufacturer:
Microsemi Corporation
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This is manufactured by Microsemi Corporation. The manufacturer part number is APT40GP90B2DQ2G. Features 145nc gate charge. Td (on/off) value of 14ns/90ns. It features igbt pt 900v 101a 543w through hole. The product is available in through hole configuration. The maximum collector current includes 101a. The product power mos 7®, is a highly preferred choice for users. Features 3.9v @ 15v, 40a. The maximum collector emitter breakdown voltage of the product is 900v. In addition, tube is the available packaging type of the product. Provide switching energy up to 795µj (off). The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 543w. It carries standard input type. Moreover, the product comes in to-247-3 variant. Features an IGBT pt type. Test condition included 600v, 40a, 4.3ohm, 15v. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The microsemi corporation's product offers user-desired applications.

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