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This is manufactured by Microsemi Corporation. The manufacturer part number is APT50GT120B2RDLG. The maximum collector current includes 106 a. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. Features 3.7v @ 15v, 50a. The maximum collector emitter breakdown voltage of the product is 1200 v. Td (on/off) value of 23ns/215ns. The product has -55°c ~ 150°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-247-3 variant. Features 240 nc gate charge. In addition, it is reach unaffected. Provide switching energy up to 3585µj (on), 1910µj (off). Test condition included 800v, 50a, 4.7ohm, 15v. The microsemi corporation's product offers user-desired applications. Its typical moisture sensitivity level is 1 (unlimited). Features an IGBT npt type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The product is available in through hole configuration. The product thunderbolt igbt®, is a highly preferred choice for users. In addition, tube is the available packaging type of the product. The maximum power of the product is 694 w. Moreover, it corresponds to apt50gt120, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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