onsemi HGT1N30N60A4D

onsemi

Product Information

Current - Collector (Ic) (Max):
96 A
HTSUS:
8541.29.0095
Vce(on) (Max) @ Vge, Ic:
2.7V @ 15V, 30A
Voltage - Collector Emitter Breakdown (Max):
600 V
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SOT-227-4, miniBLOC
Input:
Standard
NTC Thermistor:
No
REACH Status:
REACH Unaffected
Configuration:
Single
Package:
Tube
Moisture Sensitivity Level (MSL):
1 (Unlimited)
IGBT Type:
-
Current - Collector Cutoff (Max):
250 µA
Mounting Type:
Chassis Mount
Series:
-
Supplier Device Package:
SOT-227B
Power - Max:
255 W
Base Product Number:
HGT1N30
ECCN:
EAR99
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This is manufactured by onsemi. The manufacturer part number is HGT1N30N60A4D. The maximum collector current includes 96 a. It is assigned with possible HTSUS value of 8541.29.0095. Features 2.7v @ 15v, 30a. The maximum collector emitter breakdown voltage of the product is 600 v. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in sot-227-4, minibloc. Its input values include standard. NTC Thermistor - no. In addition, it is reach unaffected. The product is available in single configuration. It is shipped in tube package . Its typical moisture sensitivity level is 1 (unlimited). In addition, 250 µa is the maximum current at collector cutoff. The product is available in chassis mount configuration. sot-227b is the supplier device package value. The maximum power of the product is 255 w. Moreover, it corresponds to hgt1n30, a base product number of the product. The product is designated with the ear99 code number.

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HGT1N30N60A4D(Datasheets)
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onsemi RoHS(Environmental Information)

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