ON Semiconductor NXH80B120H2Q0SNG

Enrgtech Part No: ET21442258
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Manufacturer Part No:
NXH80B120H2Q0SNG
|
Manufacturer: ON Semiconductor

Product Information

Input Capacitance (Cies) @ Vce:

9.7nF @ 25V

Current - Collector (Ic) (Max):

41A

Detailed Description:

IGBT Module Dual Boost Chopper 1200V 41A 103W Chassis Mount 22-PIM/Q0BOOST (55x32.5)

Mounting Type:

Chassis Mount

Current - Collector Cutoff (Max):

200µA

Vce(on) (Max) @ Vge, Ic:

2.5V @ 15V, 40A

Supplier Device Package:

22-PIM/Q0BOOST (55x32.5)

Voltage - Collector Emitter Breakdown (Max):

1200V

Packaging:

Tray

Operating Temperature:

-40°C ~ 150°C (TJ)

Power - Max:

103W

Customer Reference:

Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is NXH80B120H2Q0SNG. It holds 9.7nf @ 25v of input capacitance. The maximum collector current includes 41a. It features igbt module dual boost chopper 1200v 41a 103w chassis mount 22-pim/q0boost (55x32.5). The product is available in chassis mount configuration. In addition, 200µa is the maximum current at collector cutoff. Features 2.5v @ 15v, 40a. 22-pim/q0boost (55x32.5) is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 1200v. In addition, tray is the available packaging type of the product. The product has -40°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 103w. Moreover, the product comes in module. Its input values include standard. The product is available in dual boost chopper configuration. NTC Thermistor - yes. The on semiconductor's product offers user-desired applications.

Mult Dev EOL 8/Apr/2021(PCN Obsolescence/ EOL)

NXH80B120H2Q0(Datasheets)

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ON Semiconductor NXH80B120H2Q0SNG

NXH80B120H2Q0SNG

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